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Número de pieza | IRF3711ZLPbF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF3711ZLPbF (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
PD - 95530
IRF3711ZPbF
IRF3711ZSPbF
IRF3711ZLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V 6.0m: 16nC
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
fMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
iRθJC
Junction-to-Case
RθCS
fCase-to-Sink, Flat Greased Surface
fiÃRθJA Junction-to-Ambient
giRθJA Junction-to-Ambient (PCB Mount)
Notes through are on page 12
www.irf.com
TO-220AB
IRF3711Z
D2Pak
IRF3711ZS
Max.
20
± 20
92 h
65 h
380
79
40
0.53
-55 to + 175
300 (1.6mm from case)
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.89
–––
62
40
TO-262
IRF3711ZL
Units
V
A
W
W/°C
°C
Units
°C/W
1
7/20/04
1 page IRF3711Z/S/LPbF
100
LIMITED BY PACKAGE
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
2.4
2.0
1.6 ID = 250µA
1.2
0.8
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτ=i/τRi/iRi
R2R2
τ2 τ2
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R3R3 Ri (°C/W) τi (sec)
τCτ 0.894 0.000306
τ3τ3 0.600 0.001019
0.401 0.006662
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page TO-262 Package Outline
IRF3711Z/S/LPbF
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
AS S EMBLED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
Note: "P" in ass embly line
pos ition indicates "Lead-Free"
INTERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
OR
INTERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
www.irf.com
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
PART NUMBER
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 7 = 1997
WEEK 19
A = AS S EMBLY S IT E CODE
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IRF3711ZLPbF.PDF ] |
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IRF3711ZLPbF | Power MOSFET ( Transistor ) | International Rectifier |
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