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Datasheet 12N65 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
112N65N-Channel Power MOSFET, Transistor

SEMICONDUCTOR I2N65 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 650Volts DESCRIPTION The Nell 12N65 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 650V, and max. thres
nELL
nELL
mosfet
212N65N-CHANNEL MOSFET

12N65(F,B,H) 12A mps,650 Volts N-CHANNEL MOSFET FEATURE  12A,650V,RDS(ON)=0.7Ω@VGS=10V/6A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 12N65 ITO-220AB 12N65F TO-263 12N65B TO-262 12N65H Absolute Maximum Ratings(TC=25
CHONGQING PINGYANG
CHONGQING PINGYANG
mosfet
312N65N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 12N65 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V (Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive
Inchange Semiconductor
Inchange Semiconductor
mosfet
412N65N-Channel MOSFET

12A, 650V, N沟道 场效应晶体管 产品参数规格书 工业型号 FQP12N65C FQPF12N65C 公司型号 H12N65P H12N65F 通俗命名 12N65 H HAOHAI 封装标识 P: TO-220AB F: TO-220FP 包装方式 条管装 盒装箱装 每管数量 50Pcs 12N65 Series N-Channel MOSFET 每盒数量 1000P
HAOHAI
HAOHAI
mosfet
512N65N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 12N65 12A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency s
Unisonic Technologies
Unisonic Technologies
mosfet


12N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
112N035N-Channel Field Effect Transistor

Bay Linear Inspire the Linear Power N-Channel Field Effect Transistor 12N035 Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other b
BL
BL
transistor
212N06Z12A 60V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 12N06Z 12A, 60V N-CHAN NEL POWER MOSFET „ DESCRIPTION 1 Power MOSFET The U TC 12N 06Z is an N-c hannel enh ancement mode Po wer MOSFET using UT C’ s adva nced te chnology to prov ide customers with a mi nimum on-state res istance, h igh s witching sp eed and low g
UNISONIC TECHNOLOGIES
UNISONIC TECHNOLOGIES
mosfet
312N10N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 12N10 12A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and le
Unisonic Technologies
Unisonic Technologies
mosfet
412N10PN-CHANNEL MOSFET

12N10P 12 Amps,100 Volts N-CHANNEL Power MOSFET FEATURE  12A,100V,RDS(ON)MAX=36mΩVGS=10V/10A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATION  High Frequency Piont-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA 
CHONGQING PINGYANG
CHONGQING PINGYANG
mosfet
512N18N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 12N18 ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 180V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·
Inchange Semiconductor
Inchange Semiconductor
mosfet
612N20N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 12N20 ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·
Inchange Semiconductor
Inchange Semiconductor
mosfet
712N25N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 12N25 12A, 250V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N25 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance a
Unisonic Technologies
Unisonic Technologies
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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