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Número de pieza | BSC060N10NS3G | |
Descripción | Power-MOSFET | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BSC060N10NS3G (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! OptiMOSTM3 Power-Transistor
Features
• Very low gate charge for high frequency applications
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
BSC060N10NS3 G
Product Summary
V DS
R DS(on),max
ID
100 V
6 mΩ
90 A
PG-TDSON-8
Type
BSC060N10NS3 G
Package
PG-TDSON-8
Marking
060N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=50 K/W2)
Pulsed drain current3)
Avalanche energy, single pulse
Gate source voltage
I D,pulse
E AS
V GS
T C=25 °C
I D=50 A, R GS=25 Ω
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
90
66
14.9
360
230
±20
125
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev. 2.4
page 1
2009-10-21
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
120
10 V
6V
100 7 V
5.5 V
5V
80
60
40 4.5 V
20
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
140
120
100
80
60
40
20
0
0
Rev. 2.4
150 °C
25 °C
24
V GS [V]
BSC060N10NS3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
12
4.5 V
10
5V
8
5.5 V
6V
6 7V
10 V
4
2
0
3 0 20 40 60 80 100
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
140
120
100
80
60
40
20
0
6 0 20 40 60 80 100 120 140
I D [A]
page 5
2009-10-21
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet BSC060N10NS3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
BSC060N10NS3G | Power-MOSFET | Infineon |
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