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Datasheet KTD863 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | KTD863 | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE
FEATURES High Voltage : VCEO=60V(Min.). High Current : IC(Max.)=1A. High Transition Frequency : fT=150MHz(Typ.). Wide Area of Safe Operation. Complementary to KTB764.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collecto |  KEC | transistor |
| 2 | KTD863 | TRIPLE DIFFUSED NPN TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
KTD863
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
TRIPLE DIFFUSED NPN TRANSISTOR
DESCRIPTION
The UTC KTD863 is a triple diffused NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage and high c |  Unisonic Technologies | transistor |
KTD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | KTD-LM16 | Memory Upgrade Module Kits for Dell Latitude LM Series KTD-LM/8, /16, /32, and /64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction:
Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM/8 (8MB), KTD-LM/16 (16MB), KTD-LM/32 (32MB) and KTD-LM/ 64 (64MB). Each memory upgrade kit contains two  ETC data | | |
| 2 | KTD-LM32 | Memory Upgrade Module Kits for Dell Latitude LM Series ETC data | | |
| 3 | KTD-LM64 | Memory Upgrade Module Kits for Dell Latitude LM Series KTD-LM/8, /16, /32, and /64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction:
Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM/8 (8MB), KTD-LM/16 (16MB), KTD-LM/32 (32MB) and KTD-LM/ 64 (64MB). Each memory upgrade kit contains two ETC data | | |
| 4 | KTD-LM8 | Memory Upgrade Module Kits for Dell Latitude LM Series ETC data | | |
| 5 | KTD1003 | EPITAXIAL PLANAR NPN TRANSISTOR J
BL E
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌHigh DC Current Gain
: hFE=800ᴕ3200. (VCE=5.0V, IC=300mA). ᴌWide Area of Safe Operation. ᴌLow Collector Saturation Voltage
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING KEC transistor | | |
| 6 | KTD1028 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES High DC Current Gain : hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
KTD1028
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTER KEC transistor | | |
| 7 | KTD1028V | EPITAXIAL PLANAR NPN TRANSISTOR KEC transistor | | |
| 8 | KTD1047 | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES ᴌComplementary to KTB817. ᴌRecommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC KEC transistor | | |
| 9 | KTD1047B | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Complementary to KTB817B. Recommended for 60W Audio Frequency Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse KEC transistor | |
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