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PDF PJP7NA80 Data sheet ( Hoja de datos )

Número de pieza PJP7NA80
Descripción 800V N-Channel MOSFET
Fabricantes Pan Jit International　
Logotipo Pan Jit International Logotipo



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No Preview Available ! PJP7NA80 Hoja de datos, Descripción, Manual

PPJP7NA80 / PJF7NA80
800V N-Channel MOSFET
Voltage
800 V Current
7A
Features
RDS(ON), VGS@10V,ID@ 3.5A<1.55Ω
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: TO-220AB, ITO-220AB-F Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams
ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams
ITO-220AB-F
TO-220AB
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
TC=25oC
Derate above 25oC
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
VDS
VGS
ID
IDM
EAS
PD
TJ,TSTG
RθJC
RθJA
Limited only By Maximum Junction Temperature
TO-220AB
ITO-220AB-F
800
+30
154
1.23
7
28
534
50
0.4
-55~150
0.81
62.5
2.5
120
UNITS
V
V
A
A
mJ
W
W/ oC
oC
oC/W
March 10,2014-REV.00
Page 1

1 page




PJP7NA80 pdf
PPJP7NA80 / PJF7NA80
TYPICAL CHARACTERISTIC CURVES
Fig.13 PJP7NA80 Normalized Transient Thermal Impedance vs. Pulse Width
Fig.14 PJF7NA80 Normalized Transient Thermal Impedance vs. Pulse Width
March 10,2014-REV.00
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