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Datasheet HRU50N06K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HRU50N06K | N-Channel MOSFET HRD50N06K_HRU50N06K
HRD50N06K / HRU50N06K
60V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 11.5 mΩ (Typ.) @ |  SemiHow | mosfet |
HRU Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HRU0103A | Silicon Schottky Barrier Diode for Rectifying HRU0103A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-450A (Z) Rev 1 Oct. 1997 Features
• Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.
Ordering Information  Hitachi Semiconductor diode | | |
| 2 | HRU0203A | Silicon Schottky Barrier Diode for Rectifying HRU0203A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-469B (Z) Rev 2 Oct. 1997 Features
• Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.
Ordering Information Hitachi Semiconductor diode | | |
| 3 | HRU0302 | Silicon Schottky Barrier Diode for Rectifying HRU0302A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-235G(Z) Rev 7 Jul. 1998 Features
• Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
T Hitachi Semiconductor diode | | |
| 4 | HRU0302A | Silicon Schottky Barrier Diode for Rectifying HRU0302A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-235G(Z) Rev 7 Jul. 1998 Features
• Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
T Hitachi Semiconductor diode | | |
| 5 | HRU100120 | RHRU100120 RHRU100120
Data Sheet
January 2000
File Number
3145.3
100A, 1200V Hyperfast Diode
The RHRU100120 is a hyperfast diode with soft recovery characteristics (trr < 90ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxia  Intersil Corporation data | | |
| 6 | HRU120N10K | N-Channel MOSFET HRD120N10K_HRU120N10K
HRD120N10K / HRU120N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10 mΩ (Typ. SemiHow mosfet | | |
| 7 | HRU13N10K | N-Channel MOSFET HRD13N10K_HRU13N10K
HRD13N10K / HRU13N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 20 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 85 Pȍ (Typ.) @VGS=10V SemiHow mosfet | |
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