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Datasheet STW22N95K5 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1STW22N95K5N-channel Power MOSFET

STW22N95K5 Automotive-grade N-channel 950 V, 0.280 Ω typ., 17.5 A Zener-protected SuperMESH™ 5 Power MOSFET Datasheet - production data Features 3 2 1 TO-247 Order code VDS RDS(on)max ID PTOT STW22N95K5 950 V 0.330 Ω 17.5 A 250 W • Designed for automotive applications and AEC-Q101 qual
STMicroelectronics
STMicroelectronics
mosfet


STW Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1STW-195Retaining Ring Spec Sheet

www.americanringmfg.com STW-195 Retaining Ring Spec Sheet Part Number: STW-195 STW - External JIS B 2804 Retaining Rings Ring Specs (D) Free Diameter: (t) Thickness: (b) Radial Wall: Groove Specs: (B) Application Diameter: (G) Groove Diameter: (W) Groove Width: Groove Depth: Other Specs Approximate
AmericanRing
AmericanRing
data
2STW10NA50N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STH10NA50/FI STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH10NA50 STH10NA50FI STW10NA50 s s s s s s s V DSS 500 V 500 V 500 V R DS( on) < 0.8 Ω < 0.8 Ω < 0.8 Ω ID 9.6 A 5.6 A 9.6 A TO-247 TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALAN
ST Microelectronics
ST Microelectronics
transistor
3STW10NB60N-CHANNEL Power MOSFET

® STW10NB60 N - CHANNEL 600V - 0.69Ω - 10A - TO-247 PowerMESH™ MOSFET TYPE ST W10NB60 s s s s s V DSS 600 V R DS(on) < 0.8 Ω ID 10 A TYPICAL RDS(on) = 0.69 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 DESCRIPTION
ST Microelectronics
ST Microelectronics
mosfet
4STW10NC60N-CHANNEL Power MOSFET

N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET TYPE STW10NC60 STH10NC60FI s s s s s STW10NC60 STH10NC60FI VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 10 A 10 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BEN
ST Microelectronics
ST Microelectronics
mosfet
5STW10NC70ZN-CHANNEL Power MOSFET

N-CHANNEL 700V - 0.58 Ω - 10.6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW10NC70Z s s STW10NC70Z VDSS 700 V RDS(on) < 0.75 Ω ID 10.6 A s s s TYPICAL RDS(on) = 0.58 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANC
ST Microelectronics
ST Microelectronics
mosfet
6STW10NK60ZN-channel Power MOSFET
ST Microelectronics
ST Microelectronics
mosfet
7STW10NK80ZN-CHANNEL Power MOSFET

STP10NK80Z, STP10NK80ZFP, STW10NK80Z N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet — production data Features TAB Type STP10NK80Z STP10NK80ZFP STW10NK80Z VDSS 800V 800V 800V RDS(on) <0.90Ω <0.90Ω <0.90Ω ID 9A 9A
ST Microelectronics
ST Microelectronics
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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