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PDF NDD212C Data sheet ( Hoja de datos )
| Número de pieza | NDD212C | |
| Descripción | Diode-Diode Module | |
| Fabricantes | Naina Semiconductor | |
| Logotipo |  |
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Naina Semiconductor Ltd.
NDD212C
Features
Diode-Diode Module, 212 Amps
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Low thermal resistance
Voltage Ratings (TA = 25oC, unless otherwise noted)
Type
number
Voltage
Code
VRRM, Maximum
repetitive peak
reverse voltage
VRSM, Maximum non-
repetitive peak reverse
voltage
NDD212C
60
80
100
120
140
160
180
(V)
600
800
1000
1200
1400
1600
1800
(V)
700
900
1100
1300
1500
1700
1900
VDRM, Maximum
repetitive peak off-
state voltage
(V)
600
800
1000
1200
1400
1600
1800
IRRM, Maximum
reverse leakage
current @ TJMAX
(mA)
8
Electrical Characteristics (TA = 250C unless otherwise noted)
Parameter
Symbol
Maximum average forward current @ TJ = 850C
IF(AV)
Maximum average RMS forward current
IF(RMS)
Maximum non-repetitive surge current
Maximum I2t for fusing
IFSM
I2t
Forward voltage drop
VFM
Isolation voltage
VISO
Values
212
332
6600
217800
1.4
3000
Units
A
A
A
A2s
V
V
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter
Symbol
Operating junction temperature range
TJ
Storage temperature
Thermal resistance, junction to case
Tstg
Rth(JC)
Mounting torque
to heatsink
to terminals
F
Weight
W
Values
-40 to +135
-40 to +135
0.18
5 ± 15%
5 ± 15%
200
Units
0C
0C
0C/W
Nm
g
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet NDD212C.PDF ] | |
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