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Número de pieza | RU20120L | |
Descripción | N-Channel Advanced Power MOSFET | |
Fabricantes | Ruichips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RU20120L (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RU20120L
N-Channel Advanced Power MOSFET
Features
• 20V/120A,
RDS (ON) =2.3mΩ(Typ.)@VGS=10V
RDS (ON) =4.2mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
• Power Management
• DC-DC Converters
TO252
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2012
1
N-Channel MOSFET
Rating
Unit
TC=25°C
20
±20
175
-55 to 175
120
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
480 A
120
A
93
103
W
52
1.45 °C/W
100 °C/W
64 mJ
www.ruichips.com
1 page ℃
RU20120L
Typical Characteristics
Output Characteristics
300
10V
250
200 4.5V
150
3V
100
50 1V
0
01234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=10V
ID=60A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=2.3mΩ
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
175
Capacitance
4000
3500
Frequency=1.0MHz
3000
2500
2000
Ciss
1500
1000
500
Crss
0
1
Coss
10
100
VDS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2012
5
Drain-Source On Resistance
10
8
6
4.5V
4
2
0
0
100
10V
50 100
ID - Drain Current (A)
150
Source-Drain Diode Forward
TJ=175°C
10
1 TJ=25°C
0.1
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
10
9 VDS=16V
IDS=60A
8
Gate Charge
7
6
5
4
3
2
1
0
0
10 20
QG - Gate Charge (nC)
30
www.ruichips.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RU20120L.PDF ] |
Número de pieza | Descripción | Fabricantes |
RU20120L | N-Channel Advanced Power MOSFET | Ruichips |
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