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PDF RU60450Q Data sheet ( Hoja de datos )

Número de pieza RU60450Q
Descripción N-Channel Advanced Power MOSFET
Fabricantes Ruichips 
Logotipo Ruichips Logotipo



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No Preview Available ! RU60450Q Hoja de datos, Descripción, Manual

RU60450Q
N-Channel Advanced Power MOSFET
Features
• 60V/450A,
RDS (ON) =1.3mΩ(Typ.)@VGS=10V
• Ultra Low On-Resistance
• Super High Dense Cell Design
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
•Switching Application Systems
• Inverter Systems
Pin Description
G
DS
TO247
D
i
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
RθJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
1
S
N-Channel MOSFET
Rating
Unit
TC=25°C
60
±25
175
-55 to 175
450
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
1800
450
318
600
300
0.25
50
A
A
W
°C/W
°C/W
1406
mJ
www.ruichips.com

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RU60450Q pdf
RU60450Q
Typical Characteristics
Output Characteristics
500
450 8,9,10V
400 6V
350
300 5V
250
200 4V
150
100
3V
50
0
01234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=10V
ID=75A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=1.3mΩ
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
175
15000
12500
Capacitance
Frequency=1.0MHz
10000
7500
Ciss
5000
2500
Coss
Crs
0s
1
10
VDS - Drain-Source Voltage (V)
100
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
5
Drain-Source On Resistance
5
4
3
2 Vgs=10
V
1
0
0 50 100 150 200 250 300 350 400
ID - Drain Current (A)
Source-Drain Diode Forward
100
TJ=175°C
10
1 TJ=25°C
0.1
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
10
9 VDS=48V
IDS=75A
8
Gate Charge
7
6
5
4
3
2
1
0
0
100 200 300 400
QG - Gate Charge (nC)
500
www.ruichips.com

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