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Datasheet 1N5936B Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
11N5936BZener Voltage Regulator Diodes

MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1 to 3 Watt DO-41 Surmetic 30 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1 to 3 Watt Surmetic 30 Silicon Zener Diodes . . . a complete series of 1 to 3 Watt Zener Diodes with limits and operating characteristics that refle
Motorola Semiconductors
Motorola Semiconductors
diode
21N5936BDiode, Rectifier

American Microsemiconductor
American Microsemiconductor
diode
31N5936BSILICON ZENER DIODES

www.eicsemi.com 1N5913B - 1N5956B VZ : 3.3 - 200 Volts PD : 1.5 Watts FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free MECHANICAL DATA * Case : DO-41 Molded plastic * Epoxy : UL94V-0 rate flame retard
EIC
EIC
diode
41N5936B3W SILICON ZENER DIODES

1N5913B...1N5956B 3 W SILICON ZENER DIODES Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Steady State Power Dissipation at TL = 75 OC, Lead Length = 3/8" Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 200 mA Max. 0.7 Max. 2.
SEMTECH
SEMTECH
diode
51N5936BSILICON ZENER DIODE

1N5913B THRU 1N5956B SILICON ZENER DIODE 1.5 WATT, 3.3 THRU 200 VOLTS Central w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5913B series silicon Zener diode is a high quality voltage regulator designed for use in automotive, industrial, commercial, entertainment and
Central Semiconductor
Central Semiconductor
diode


1N5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
11N50Diode, Rectifier

American Microsemiconductor
American Microsemiconductor
diode
21N50GOLD BONDED GERMANIUM DIODES

New Jersey Semiconductor
New Jersey Semiconductor
diode
31N50N-CHANNEL POWER MOSFET

1N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re
Unisonic Technologies
Unisonic Technologies
mosfet
41N50-KWN-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 1N50-KW Preliminary 1A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara
Unisonic Technologies
Unisonic Technologies
mosfet
51N500Diode, Rectifier

American Microsemiconductor
American Microsemiconductor
diode
61N5000Silicon Rectifiers

Microsemi Corporation
Microsemi Corporation
rectifier
71N5000Diode Switching 400V 3A 2-Pin TOP HAT

New Jersey Semiconductor
New Jersey Semiconductor
diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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