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PDF 2SD2118 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2118 | |
| Descripción | NPN Transistor | |
| Fabricantes | Transys | |
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Hay una vista previa y un enlace de descarga de 2SD2118 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transys
Electronics
LIMITED
TO-252-2Plastic-Encapsulated Transistors
2SD2118 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
1 W (Tamb=25℃)
Collector current
ICM: 5
Collector-base voltage
A
V(BR)CBO:
50 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
TO-252-2
6. 50¡ À0. 15
5. 30¡ À0. 10
0. 51¡ À0. 05
2. 30¡ À0. 10
1. 20
0. 51¡ À0. 10
0¡ 0«. 10
5¡ ã
5¡ ã
5¡ ã
1. BASE
2. 30¡ À0. 10
0. 80¡ À0. 10
0. 60¡ À0. 10
2. 30¡ À0. 10
0¡¡ ã«9¡ ã
0. 51
2. COLLECTOR
123
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=50µA, IE=0
Ic=1mA, IB=0
IE=50µA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
VCE=2V, IC=500mA
IC=4A, IB=100mA
VCE=6V, IC=50mA, f=100MHz
VCB=20V, IE=0, f=1MHz
MIN TYP MAX UNIT
50 V
20 V
6V
0.5 µA
0.5 µA
120 390
1V
150 MHz
30 pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
Q
120-270
R
180-390
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD2118.PDF ] | |
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