(PDF) MTBA5A10Q8 Datasheet - Dual N-Channel Enhancement Mode Power MOSFET

Número de pieza	MTBA5A10Q8
Descripción	Dual N-Channel Enhancement Mode Power MOSFET
Fabricantes	CYStech
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No Preview Available ! CYStech Electronics Corp. Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 1/8 Dual N-Channel Logic Level Enhancement Mode Power MOSFET MTBA5A10Q8 BVDSS 100V ID 3A RDSON(MAX) 150mΩ Description The MTBA5A10Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features • RDS(ON)=150mΩ(max.)@VGS=10V, ID=2.5A • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free lead plating & Halogen-free package Equivalent Circuit MTBA5A10Q8 Outline SOP-8 G：Gate S：Source D：Drain MTBA5A10Q8 CYStek Product Specification 1 page CYStech Electronics Corp. Typical Characteristics(Cont.) Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 5/8 MTBA5A10Q8 CYStek Product Specification 5 Page

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PDF MTBA5A10Q8 Data sheet ( Hoja de datos )