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PDF MTDN8233X6 Data sheet ( Hoja de datos )
| Número de pieza | MTDN8233X6 | |
| Descripción | Dual N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C911X6
Issued Date : 2013.07.12
Revised Date : 2013.07.23
Page No. : 1/10
Dual N -Channel Enhancement Mode MOSFET
MTDN8233X6 BVDSS
ID
RDSON (TYP.)
VGS=4.5V
VGS=4.5V, ID=5.5A
VGS=4.0V, ID=5.5A
VGS=3.7V, ID=5.5A
VGS=3.1V, ID=5.5A
VGS=2.5V, ID=5.5A
20V
11A
6.0mΩ
6.0mΩ
6.2 mΩ
6.7 mΩ
7.8 mΩ
Description
The MTDN8233X6 consists of two N-channel enhancement-mode MOSFETs in a single TDFN2×3-6L
package, providing the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TDFN2×3-6L package is universally preferred for all commercial-industrial surface mount
applications.
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• ESD protected
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTDN8233X6
Outline
TDFN2×3-6L
G：Gate S：Source D：Drain
MTDN8233X6
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C911X6
Issued Date : 2013.07.12
Revised Date : 2013.07.23
Page No. : 5/10
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
100
Ciss
C oss
Crss
10
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2
ID=1mA
1
0.8
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=5V
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
Gate Charge Characteristics
5
VDS=16V
4 VDS=10V
VDS=4V
3
2
1
ID=11A
0
0 4 8 12 16
Total Gate Charge---Qg(nC)
100
RDS(ON
) Limit
10
1
Maximum Safe Operating Area
1ms
10ms
100ms
1s
0.1 TA=25°C, Tj(max)=150°C,
VGS=4.5V, RθJA=80°C/W
Single Pulse
DC
0.01
0.1
1 10
VDS, Drain-Source Voltage(V)
100
MTDN8233X6
Maximum Drain Current vs Junction Temperature
14
12
10
8
6
4
2 TA=25°C, VGS=10V, RθJA=80°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTDN8233X6.PDF ] | |
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