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PDF MTDNK2N6 Data sheet ( Hoja de datos )
| Número de pieza | MTDNK2N6 | |
| Descripción | Dual N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C446N6
Issued Date : 2009.06.15
Revised Date : 2013.09.06
Page No. : 1/7
Dual N-CHANNEL ENHANCEMENT MODE MOSFET
MTDNK2N6
BVDSS
ID
RDSON(MAX)
60V
0.51A
1.6Ω
Description
The MTDNK2N6 is a dual N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free package
Equivalent Circuit
MTDNK2N6
* with gate protection diode
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C (Note 1)
Pulsed Drain Current (Note 2, 3)
Total Power Dissipation @ TA=25 °C
Linear Derating Factor
Operating Junction Temperature and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient (Note 1)
VDS
VGS
ID
IDM
Pd
Tj, Tstg
Rth,ja
60
±20
0.51
1.5
0.96
0.016
-55~+150
130
Note : 1.Surface mounted on 0.125 in² copper pad of FR-4 board. 180℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
Unit
V
V
A
A
W
W / °C
°C
°C/W
MTDNK2N6
CYStek Product Specification
1 page  
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C446N6
Issued Date : 2009.06.15
Revised Date : 2013.09.06
Page No. : 5/7
Carrier Tape Dimension
MTDNK2N6
CYStek Product Specification
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MTDNK2N6.PDF ] | |
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