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Datasheet 2SB1119 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SB1119 | PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:1785A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1119/2SD1619
LF Amplifier, Electronic Governor Applications
Features
· Very small size making it easy to provide highdensity, small-sized hybrid IC’s.
Package Dimensions
unit:mm 2038
[2SB1119/2SD1619]
( ) : 2SB1119
Specifi |  Sanyo Semicon Device | transistor |
| 2 | 2SB1119 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1119
FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP)
SOT-89
1. BASE
Collector current -1 A ICM: Collector current (Pulse) ICP: -2 A Collector-base voltage -25 V V(BR)CBO |  TRANSYS | transistor |
| 3 | 2SB1119 | Transistor SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistors 2SB1119
Features
Very small size making it easy to provide highdensity, small-sized hybrid IC’ s.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Coll |  Kexin | transistor |
| 4 | 2SB1119 | PNP Silicon Medium Power Transistor 2SB1119/2SD1619
Elektronische Bauelemente
RoHS Compliant Product
D D1 A
PNP Silicon Medium Power Transistor
SOT-89
E1
FEATURES
b1
Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating |  SeCoS | transistor |
| 5 | 2SB1119 | Transistor 2SB1 1 1 9
TRANSISTOR(PNP)
SOT-89-3L
1. BASE
FEATURES z Small Flat Package z LF Amplifier, Electronic Governor Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage |  Jin Yu Semiconductor | transistor |
2SB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SB030070MLJY | 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High sur  Silan Microelectronics transistor | | |
| 2 | 2SB035030MLJY | 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS 2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; H Silan Microelectronics transistor | | |
| 3 | 2SB035100ML | 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS 2SB035100ML
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High su Silan Microelectronics transistor | | |
| 4 | 2SB0709A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SD0601A (2SD601A) ■ Features
• High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and th  Panasonic Semiconductor transistor | | |
| 5 | 2SB0710 | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
| 6 | 2SB0710A | Transistor, Silicon PNP Epitaxial Type Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
• Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the ma Panasonic Semiconductor transistor | | |
| 7 | 2SB0766 | Silicon PNP epitaxial planer type(For low-frequency output amplification) Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SD874 and 2SD874A
Unit: mm
s Features
q q
2.6±0.1
0.4max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB766 2SB766A 2SB766 VCEO VEBO ICP IC PC* Panasonic Semiconductor transistor | |
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