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Datasheet 2SD1918 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SD1918 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1918
DESCRIPTION ·Suitable for middle power drivers ·High voltage:VCEO=160V ·Complementary PNP types:2SB1275 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Mo |
 Inchange Semiconductor |
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| 2 | 2SD1918 | Power Transistor (160V / 1.5A) 2SD2211 / 2SD1918 / 2SD1857A
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
!Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency.(fT = 80MHZ) 4) Complements the 2SB1275 / 2SB1236A. !Ext |
 ROHM Semiconductor |
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| 1 | 2SD1918 | Silicon NPN Epitaxial SMD Type
Silicon NPN Epitaxial 2SD1918
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High breakdown voltage.(BVCEO = 160V) Low collector output capacitance.Typ. 20pF at VCB = 10V
+0.2 9.70 -0.2
+0.15 1.50 -0.15
6.50 +0.2 5.30-0.2
+0.15 -0.15
High transition frequency.(fT = |
 Kexin |
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