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Datasheet 2SK2002-01M Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SK2002-01M | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK2002-01M
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Fast Switching Speed
APPLICATIONS ·Switching regulators ·UPS ·General purpose power amplifier
ABSOLUTE MAXIMU |
 Inchange Semiconductor |
 |
| 1 | 2SK2002-01MR | N-channel MOS-FET 2SK2002-01MR
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
600V
4,5Ω
3A
30W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Pur |
 Fuji Electric |
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