Datasheet 2SK2552B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SK2552B	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK2552B is suitable for converter of ECM. General-purpose product. PACKAGE DRAWING (Unit: mm) 0.3 +0.1 –0 0.15 +0.1 –0.	NEC

2SK25 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SK2545	FET Silicon N Channel Mos Type(for High speed/ High Voltage Switching) 2SK2545 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2545 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.9 Ω(	Toshiba Semiconductor
2SK2541	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING	NEC
2SK2543	Silicon N Channel MOS Type Field Effect Transistor 2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2543 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) l High forward transfer admittance : \|Yfs\| = 7.0 S (typ.) l Low leakage current :	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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