Datasheet AM5853J8R Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	AM5853J8R	MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE AiT Semiconductor Inc. www.ait-ic.com AM5853 MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM5853 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density. Advanced trench technology. FEATURES  MOSFET -20V/-3.5A, R	AiT Semiconductor

AM5853 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
AM5853	P-CHANNEL MOSFET WITH 0.12V SCHOTTKY DIODE MOSFET AiT Semiconductor Inc. www.ait-ic.com AM5853 MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM5853 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density. Advanced trench technology. FEATURES 	AiT Semiconductor
AM5853J8VR	MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE AiT Semiconductor Inc. www.ait-ic.com AM5853 MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM5853 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density. Advanced trench technology. FEATURES 	AiT Semiconductor
AM5853J8R	MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE AiT Semiconductor Inc. www.ait-ic.com AM5853 MOSFET+ SCHOTTKY DIODE -20V P-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM5853 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density. Advanced trench technology. FEATURES 	AiT Semiconductor

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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