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Datasheet BZX84C2V4 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BZX84C2V4 | Zener Diodes MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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Features
Planar Die construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes
BZX84C2V4 |  MCC | diode |
| 2 | BZX84C2V4 | Zener Diode, Rectifier SEMICONDUCTOR
TECHNICAL DATA
CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION.
FEATURES Small Package : SOT-23 Normal Voltage Tolerance About
2.5%.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Power Dissipation Junction Temperature Storage Temperature Range
PD* |  KEC | diode |
| 3 | BZX84C2V4 | SURFACE MOUNT ZENER DIODE BZX84C2V4BZX84C39
SURFACE MOUNT ZENER DIODE
VOLTAGE RANGE 2.4 to 39 Volts POWER RATING 350 mWatts
FEATURES
* Planar Die Construction * 350mW Power Dissipation * Zener Volages from 2.4V-39V * Ideally Suited for Automated Assembly Processes
MECHANICAL DATA
* Case: Molded plastic * Epoxy: UL 94V-O rat |  Rectron | diode |
| 4 | BZX84C2V4 | SILIICON PLANAR VOLTAGE REGULATOR DIODE Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILIICON PLANAR VOLTAGE REGULATOR DIODE
3
2 1
3
Pin Configuration 1 = A N ODE 2 = NC 3 = CATHODE
12
BZX84C2V4 to 75V
SOT-23 Formed SMD Package
Low voltage general purpose voltage regulator diode
ABSOLUTE |  CDIL | diode |
| 5 | BZX84C2V4 | Surface Mount Zener Diode Small Signal Product
BZX84C2V4 thru BZX84C39
Taiwan Semiconductor
Surface Mount Zener Diode
FEATURES
- Zener voltages from : 2.4V - 39V - Planar die construction - Ideally suited for automated assembly processes - Moisture sensitivity : Level 1 per J-STD-020
MECHANICAL DATA
- Case : SOT-23, mold |  Taiwan Semiconductor | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju  COS diode | | |
| 2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
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