|
|
Datasheet CEH2288 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEH2288 | N-Channel Enhancement Mode Field Effect Transistor CEH2288
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 5.2A , RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable. Lead-free plating ; RoHS compliant. TSOP-6 package.
4 5 6
3 2 1 TSOP-6
G1(6)
D1(2)
|
CET |
CEH2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEH2608 | Dual Enhancement Mode Field Effect Transistor |
CET |
|
CEH2331 | P-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
|
CEH2321 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
Esta página es del resultado de búsqueda del CEH2288. Si pulsa el resultado de búsqueda de CEH2288 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |