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Datasheet K4S561633C-P1L Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | K4S561633C-P1L | 16Mx16 SDRAM 54CSP K4S561633C-R(B)L/N/P
CMOS SDRAM
16Mx16 SDRAM 54CSP
(VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V)
Revision 1.4 December 2002
Rev. 1.4 Dec. 2002
K4S561633C-R(B)L/N/P
4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP
FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four | Samsung semiconductor | data |
K4S Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K4S160822D | 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL K4S160822D
CMOS SDRAM
2Mx8 SDRAM
1M x 8bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.0 October 1999
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.0 (Oct. 1999)
K4S160822D
Revision History
Revision 1.0 (October 1999)
CMOS SDRAM
-2-
R Samsung semiconductor data | | |
2 | K4S161622D | 512K x 16Bit x 2 Banks Synchronous DRAM K4S161622D
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) Al Samsung semiconductor data | | |
3 | K4S161622E | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V po Samsung semiconductor data | | |
4 | K4S161622E-TC10 | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V po Samsung semiconductor data | | |
5 | K4S161622E-TC55 | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V po Samsung semiconductor data | | |
6 | K4S161622E-TC60 | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V po Samsung semiconductor data | | |
7 | K4S161622E-TC70 | 1M x 16 SDRAM K4S161622E
CMOS SDRAM
1M x 16 SDRAM
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Revision 1.1 Jan 2003
Samsung Electronics reserves the right to change products or specification without notice.
Rev 1.1 Jan '03
K4S161622E
512K x 16Bit x 2 Banks Synchronous DRAM
FEATURES
• • • • 3.3V po Samsung semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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