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Datasheet KTD1510 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | KTD1510 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KTD1510
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.5V(Max) @IC= 7A ·High DC Current Gain
: hFE= 5000(Min) @ IC= 7A, VCE= |  Inchange Semiconductor | transistor |
| 2 | KTD1510 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER DARLINGTON TRANSISTOR.
FEATURES Complementary to KTB2510. Recommended for 60W Audio Amplifier Output Stage.
KTD1510
TRIPLE DIFFUSED NPN TRANSISTOR
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base |  KEC | transistor |
KTD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | KTD-LM16 | Memory Upgrade Module Kits for Dell Latitude LM Series KTD-LM/8, /16, /32, and /64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction:
Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM/8 (8MB), KTD-LM/16 (16MB), KTD-LM/32 (32MB) and KTD-LM/ 64 (64MB). Each memory upgrade kit contains two  ETC data | | |
| 2 | KTD-LM32 | Memory Upgrade Module Kits for Dell Latitude LM Series ETC data | | |
| 3 | KTD-LM64 | Memory Upgrade Module Kits for Dell Latitude LM Series KTD-LM/8, /16, /32, and /64 Memory Upgrade Module Kits for Dell® Latitude LM Series Introduction:
Kingston Technology® manufactures four memory module kits for Dell ® Latitude LM Series: KTD-LM/8 (8MB), KTD-LM/16 (16MB), KTD-LM/32 (32MB) and KTD-LM/ 64 (64MB). Each memory upgrade kit contains two ETC data | | |
| 4 | KTD-LM8 | Memory Upgrade Module Kits for Dell Latitude LM Series ETC data | | |
| 5 | KTD1003 | EPITAXIAL PLANAR NPN TRANSISTOR J
BL E
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌHigh DC Current Gain
: hFE=800ᴕ3200. (VCE=5.0V, IC=300mA). ᴌWide Area of Safe Operation. ᴌLow Collector Saturation Voltage
: VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING KEC transistor | | |
| 6 | KTD1028 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES High DC Current Gain : hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA).
KTD1028
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTER KEC transistor | | |
| 7 | KTD1028V | EPITAXIAL PLANAR NPN TRANSISTOR KEC transistor | |
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