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Datasheet NE662M16 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NE662M16 | NPN SILICON RF TRANSISTOR DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
FEATURES • Ideal for low noise high-gain amplification and oscillation at 3 GHz or over
NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz � |  CEL | transistor |
| 2 | NE662M16 | NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: • Flat Lead Style with a height of just 0.50mm
NE662M16
DESCRIPTION
The NE662M16 is fab |  NEC | transistor |
| 3 | NE662M16-A | NPN SILICON RF TRANSISTOR DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
FEATURES • Ideal for low noise high-gain amplification and oscillation at 3 GHz or over
NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz � | CEL | transistor |
| 4 | NE662M16-T3 | NPN SILICON HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: • Flat Lead Style with a height of just 0.50mm
NE662M16
DESCRIPTION
The NE662M16 is fab | NEC | transistor |
| 5 | NE662M16-T3-A | NPN SILICON RF TRANSISTOR DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
FEATURES • Ideal for low noise high-gain amplification and oscillation at 3 GHz or over
NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz � | CEL | transistor |
NE6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NE600 | 1GHz LNA and mixer Philips Semiconductors
Product specification
1GHz LNA and mixer
NE/SA600
DESCRIPTION
The NE/SA600 is a combined low noise amplifier (LNA) and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a 2dB noise www.datasheet4u.com figur  NXP Semiconductors data | | |
| 2 | NE602 | NE602 http://www.Datasheet4U.com
 ETC data | | |
| 3 | NE602A | Double-Balanced Mixer and Oscillator Philips oscillator | | |
| 4 | NE604A | High Performance Low Power FM IF System Philips data | | |
| 5 | NE605 | HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM ( )
NXP Semiconductors data | | |
| 6 | NE612 | Double-balanced mixer and oscillator RF COMMUNICATIONS PRODUCTS
SA612A Double-balanced mixer and oscillator
Product specification Replaces data of September 17, 1990 IC17 Data Handbook 1997 Nov 07
Philips Semiconductors
Philips Semiconductors
Product specification
Double-balanced mixer and oscillator
SA612A
DESCRIPTION
The SA612  Philipss oscillator | | |
| 7 | NE614A | Low Power FM IF System w
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NXP Semiconductors data | |
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