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Datasheet NE680 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NE680 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
00 (CHIP)
NE680 SERIES
E B
35 (MICRO- | NEC | transistor |
2 | NE680 | NPN SILICON HIGH FREQUENCY TRANSISTOR NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • | CEL | transistor |
3 | NE68000 | NPN SILICON HIGH FREQUENCY TRANSISTOR NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • | CEL | transistor |
4 | NE68018 | NONLINEAR MODEL NONLINEAR MODEL
SCHEMATIC
CCBPKG CCB LC LBX Base LB CCE LCX Collector
NE68018
Q1
CBEPKG
LE
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.84e-16 124.9 1.05 11.9 0.027 1.0e-14 2.17 1 1.05 | NEC | data |
5 | NE68018 | NPN SILICON HIGH FREQUENCY TRANSISTOR NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • | CEL | transistor |
NE6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NE600 | 1GHz LNA and mixer Philips Semiconductors
Product specification
1GHz LNA and mixer
NE/SA600
DESCRIPTION
The NE/SA600 is a combined low noise amplifier (LNA) and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a 2dB noise www.datasheet4u.com figur NXP Semiconductors data | | |
2 | NE602 | NE602 http://www.Datasheet4U.com
ETC data | | |
3 | NE602A | Double-Balanced Mixer and Oscillator Philips oscillator | | |
4 | NE604A | High Performance Low Power FM IF System Philips data | | |
5 | NE605 | HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM ( )
NXP Semiconductors data | | |
6 | NE612 | Double-balanced mixer and oscillator RF COMMUNICATIONS PRODUCTS
SA612A Double-balanced mixer and oscillator
Product specification Replaces data of September 17, 1990 IC17 Data Handbook 1997 Nov 07
Philips Semiconductors
Philips Semiconductors
Product specification
Double-balanced mixer and oscillator
SA612A
DESCRIPTION
The SA612 Philipss oscillator | | |
7 | NE614A | Low Power FM IF System w
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NXP Semiconductors data | |
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Número de pieza | Descripción | Fabricantes | |
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